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US 2019/0319032 A1Published application
Vertical transport devices with greater density through modified well shapes
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Stuart A. Sieg, Junli Wang
Life of this patent
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Abstract
In accordance with an embodiment of the present invention, a memory cell is provided. The memory cell includes a first L-shaped bottom source/drain including a first dopant, and a first adjoining bottom source/drain region abutting the first L-shaped bottom source/drain, wherein the first adjoining bottom source/drain region includes a second dopant that is the opposite type from the first dopant.
Claims20
A memory cell, comprising:
- a first L-shaped bottom source/drain including a first dopant;
- and
- a first adjoining bottom source/drain region abutting the first L-shaped bottom source/drain, wherein the first adjoining bottom source/drain region includes a second dopant that is the opposite type from the first dopant.
A static random access memory (SRAM) cell, comprising:
- a first L-shaped bottom source/drain including a p-type dopant;
- a vertical fin on the first L-shaped bottom source/drain;
- a first adjoining bottom source/drain region including an n-type dopant;
- two vertical fins on the first adjoining bottom source/drain region;
- a second L-shaped bottom source/drain region electrically separated from the first L-shaped bottom source/drain region by an isolation region fill;
- and
- a second adjoining bottom source/drain region abutting the second L-shaped bottom source/drain.
4 more elements
A method of forming a memory cell, comprising:
- forming a plurality of vertical fins on a substrate;
- forming a first masking layer on a subset of the plurality of fins, wherein a portion of the plurality of vertical fins is exposed between the first portion of the first masking layer and a second portion of the first masking layer;
- forming a first bottom source/drain region below the exposed portion of vertical fins;
- forming a second masking layer on the exposed portion of the plurality of vertical fins;
- removing the first masking layer to expose the subset of the plurality of fins;
- forming a second bottom source/drain region below the exposed subset of the plurality of vertical fins that abuts the first bottom source/drain region;
- removing the second masking layer;
- and
- forming spacers on the plurality of vertical fins.
6 more elements
Dependencies are inferred from the claim text.