Semiconductor device and method for fabricating the same
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsWen-Fu Huang, Fu-Che Lee
Life of this patent
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a logic region; forming a stack structure on the memory region and a gate structure on the logic region; forming a first cap layer on the stack structure and the gate structure; performing an oxidation process to form an oxide layer on the first cap layer; forming a second cap layer on the oxide layer; and removing part of the second cap layer, part of the oxide layer, and part of the first cap layer on the logic region to form a spacer adjacent to the gate structure.
Claims19
A method for fabricating semiconductor device, comprising:
- providing a substrate having a memory region and a logic region;
- forming a stack structure on the memory region and a gate structure on the logic region;
- forming a first cap layer on the stack structure and the gate structure;
- performing an oxidation process to form an oxide layer on the first cap layer;
- forming a second cap layer on the oxide layer;
- and
- removing part of the second cap layer, part of the oxide layer, and part of the first cap layer on the logic region to form a spacer adjacent to the gate structure.
A semiconductor device, comprising:
- a substrate having a memory region and a logic region;
- buried gates in the substrate on the memory region;
- a stacked structure on the buried gates on the memory region, wherein the stacked structure comprises:
- a first semiconductor layer;
- a first metal layer on the first semiconductor layer;
- and
- a first dielectric layer on the first metal layer;
- a gate structure on the logic region, wherein the gate structure comprises:
- a second semiconductor layer;
- a second metal layer on the second semiconductor layer;
- and
- a second dielectric layer on the second metal layer;
- a first spacer around the gate structure, wherein the first spacer comprises:
- a first cap layer on the stacked structure and the gate structure;
- an oxide layer on the first cap layer;
- and
- a second cap layer on the oxide layer.
Dependencies are inferred from the claim text.