Integrated circuit device

An integrated circuit device comprising:

• a substrate;
• a plurality of fin-type active regions protruding from the substrate, the plurality of fin-type active regions having a first region and a second region, the plurality of fin-type active regions extending in parallel to one another in a first direction;
• and
• a plurality of gate structures and a plurality of fin-isolation insulating portions extending on the substrate in a second direction crossing the first direction, the plurality of gate structures and the plurality of fin-isolation insulating portions at a constant pitch in the first direction,
• wherein a pair of fin-isolation insulating portions from among the plurality of fin-isolation insulating portions are between a first element and a second element of a pair of gate structures from among the plurality of gate structures, and
• the plurality of fin-isolation insulating portions comprise a first fin-isolation insulating portion in the first region and a second fin-isolation insulating portion in the second region, wherein at least a portion of the first fin-isolation insulating portion has a different material from at least a portion of the second fin-isolation insulating portion.

An integrated circuit device comprising:

• a substrate;
• a plurality of fin-type active regions protruding from the substrate, the plurality of fin-type active regions having a first region and a second region and extending in parallel to one another in a first direction;
• and
• a plurality of gate structures and a plurality of fin-isolation insulating portions extending on the substrate in a second direction crossing the first direction and at a constant pitch in the first direction,
• wherein a pair of fin-isolation insulating portions from among the plurality of fin-isolation insulating portions are between a first element and a second element of a pair of gate structures from among the plurality of gate structures in the first region, and
• one fin-isolation insulating portion from among the plurality of fin-isolation insulating portions is between a pair of gate structures from among the plurality of gate structures in the second region.