Nanowire enabled substrate bonding and electrical contact formation
AssigneeInternational Business Machines Corporation
InventorsLi-Wen HUNG, Reinaldo VEGA, Hari MALLELA
Life of this patent
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Abstract
A technique relates to a semiconductor device. First nanowires are formed on a first substrate, the first nanowires being electrically coupled to one or more first electrical sites on the first substrate. Second nanowires are formed on a second substrate, the second nanowires being electrically coupled to one or more second electrical sites on the second substrate. The first nanowires and the second nanowires are electrically coupled such that the one or more first electrical sites are electrically coupled to the one or more second electrical sites.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- forming first nanowires on a first substrate, the first nanowires being electrically coupled to first electrical sites on the first substrate, each of the first electrical sites having a first width, the first width selected from the group consisting of about 2 micrometers to about 9 micrometers;
- forming second nanowires on a second substrate, the second nanowires being electrically coupled to second electrical sites on the second substrate, each of the second electrical sites being spaced apart by a separation distance;
- and
- electrically coupling the first nanowires and the second nanowires such that the first electrical sites are electrically coupled to the second electrical sites.
A semiconductor device comprising:
- first nanowires on a first substrate, the first nanowires electrically coupled to first electrical sites on the first substrate, each of the first electrical sites having a first width, the first width selected from the group consisting of about 2 micrometers to about 9 micrometers;
- and
- second nanowires on a second substrate, the second nanowires electrically coupled to one or more second electrical sites on the second substrate, each of the second electrical sites being spaced apart by a separation distance;
- wherein the first substrate opposes the second substrate such that the first nanowires at the first electrical sites are electrically connected to the second nanowires at the second electrical sites.
A method of fabricating a semiconductor device, the method comprising:
- providing a first device having first nanowires on a first substrate, the first nanowires being electrically coupled to first electrical sites on the first substrate, each of the first electrical sites comprising a first electrical pad;
- providing a second device having second nanowires on a second substrate, the second nanowires being electrically coupled to second electrical sites on the second substrate, each of the second electrical sites comprising a second electrical pad;
- and
- joining the first nanowires and the second nanowires such that the first electrical pad of the first electrical sites is electrically coupled to the second electrical pad of the second electrical sites.
Dependencies are inferred from the claim text.