Back to results
US 2019/0318995 A1Published application
Semiconductor Wafer, Semiconductor Chip and Method of Fabricating a Semiconductor Wafer
AssigneeInfineon Technologies Austria AG
InventorOliver Blank
Life of this patent
Estimating the term…
Abstract
In an embodiment, a semiconductor wafer is provided that includes a plurality of component positions with scribe line regions located at least one of adjacent to and between the component positions. The component positions include an active device structure. An auxiliary structure is positioned in one or more of the scribe line regions. The auxiliary structure is electrically coupled to an auxiliary contact pad which includes tungsten.
Claims15
A semiconductor wafer, comprising:
- a plurality of component positions with scribe line regions located at least one of adjacent to and between the component positions, the component positions comprising an active device structure;
- and
- an auxiliary structure positioned in one or more of the scribe line regions,
- wherein the auxiliary structure is electrically coupled to an auxiliary contact pad comprising tungsten,
- wherein the auxiliary contact pad has an exposed tungsten surface.
2 more elements
A method of fabricating a semiconductor wafer, the method comprising:
- providing a semiconductor wafer;
- forming active device structures in component positions with scribe line regions located at least one of adjacent to and between the component positions;
- forming one or more auxiliary structures in one or more of the scribe line regions;
- forming a metallization structure on the component positions and on the scribe line regions, wherein a first conductive layer of the metallization structure comprises tungsten;
- forming one or more auxiliary contact pads in the tungsten layer arranged in the scribe line regions and that are electrically coupled to the one or more auxiliary structures.
2 more elements
A semiconductor chip, comprising:
- a semiconductor substrate comprising an active device region and a peripheral edge region laterally surrounding the active device region,
- wherein a discrete region of a layer comprising tungsten is arranged in the peripheral edge region.
Dependencies are inferred from the claim text.