Semiconductor devices and methods for manufacturing the same

A semiconductor device, comprising:

• a semiconductor substrate, wherein the semiconductor substrate has a first region and a second region adjacent to the first region;
• an interconnection structure and a fuse structure disposed on the first region and the second region of the semiconductor substrate, respectively;
• a first dielectric layer covering the interconnection structure and the fuse structure;
• a first conductive pad disposed on the interconnection structure, wherein the first conductive pad is electrically connected to the interconnection structure;
• a capping layer disposed on the first region and the second region of the semiconductor substrate, wherein the capping layer covers a sidewall of the first conductive pad;
• an etching stop layer disposed on the second region of the semiconductor substrate, wherein the etching stop layer covers the capping layer;
• a second dielectric layer disposed on the etching stop layer and the capping layer;
• and
• a first opening disposed on the fuse structure and the second region of the semiconductor substrate, wherein the first opening removes the second dielectric layer, the etching stop layer, the capping layer and a portion of the first dielectric layer.