Semiconductor Device and Method of Forming Conductive Vias to Have Enhanced Contact to Shielding Layer

A method of making a semiconductor device, comprising:

• providing a substrate including a first conductive via formed through the substrate and a second conductive via formed through the substrate adjacent to the first conductive via, wherein the first conductive via is offset with respect to the second conductive via;
• disposing an electrical component in a die attach area over a first surface of the substrate;
• singulating the substrate through the first conductive via and second conductive via;
• and
• forming a shielding layer over the electrical component and in contact with a side surface of the first conductive via and second conductive via, wherein the side surface of the first conductive via has a greater exposed surface area than the side surface of the second conductive via.

A method of making a semiconductor device, comprising:

• providing a substrate including a plurality of conductive vias formed through the substrate in an offset pattern along a centerline;
• disposing an electrical component in a die attach area over a first surface of the substrate;
• singulating the substrate through the conductive vias;
• and
• forming a shielding layer over the electrical component and in contact with a side surface of the conductive vias.

A method of making a semiconductor device, comprising:

• providing a substrate including a plurality of conductive vias having a rectangular form extending through the substrate;
• disposing an electrical component in a die attach area over a first surface of the substrate;
• singulating the substrate through the conductive vias;
• and
• forming a shielding layer over the electrical component and in contact with a side surface of the conductive vias.

A semiconductor device, comprising:

• a substrate including a plurality of conductive vias formed through the substrate in an offset pattern along a centerline;
• an electrical component disposed in a die attach area over a first surface of the substrate, wherein the substrate is singulated through the conductive vias;
• and
• a shielding layer formed over the electrical component and in contact with a side surface of the conductive vias.