Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• forming a first mold pattern on a hardmask layer on a substrate;
• forming a spacer layer on the first mold pattern and on the hardmask layer, the spacer layer comprising a first segment covering a sidewall of the first mold pattern and a second segment horizontally extending from the first segment, the second segment covering a top surface of the hardmask layer;
• forming a first mold layer that exposes a portion of the spacer layer;
• forming a first opening in the spacer layer by removing the second segment of the exposed portion of the spacer layer via an anisotropic etching process that uses the first segment of the exposed portion as an etching mask;
• and
• forming a second opening in the spacer layer by removing the first mold pattern.

A semiconductor device, comprising a first conductive pattern and a second conductive pattern extending in parallel in a first direction on a substrate,

• wherein the first conductive pattern is spaced apart from the second conductive pattern at a first distance in a second direction intersecting the first direction,
• wherein the first conductive pattern comprises a first segment adjacent to an end of the first conductive pattern, the first segment having a width in the second direction that decreases toward the end of the first conductive pattern,
• wherein the second conductive pattern comprises a second segment adjacent to an end of the second conductive pattern that is adjacent to the first segment, the second segment having a width in the second direction that increases toward the end of the second conductive pattern, and
• wherein a second distance in the second direction between the first segment and the second segment is substantially equal to the first distance.