Self aligned via and pillar cut for at least a self aligned double pitch

A method of forming via openings comprising:

• forming a first set of spacers on sidewalls of a first set of mandrels, the first set of mandrels present on a material layer for forming a second mandrel that is present overlying at least one interlevel dielectric layer;
• etching the mandrel material layer using the first set of spacers as an etch mask to form a second set of mandrels, wherein etching the mandrel material layer includes removing the first set of mandrels;
• forming a second set of spacers on the second set of mandrels;
• etching the hardmask layer using the second set of spacers on the second set of mandrels to define a first pillar of hardmask material;
• etching the interlevel dielectric layer using the first pillar of hardmask material and a first via etch mask to provide a first via opening;
• removing the second set of mandrels;
• forming a pillar etch mask having an opening exposing a portion of the hardmask layer and the second set of spacers;
• etching the portion of the hardmask layer exposed by the pillar etch mask to form a second pillar of hardmask material;
• forming a second via mask having an opening exposing a portion of the at least one interlevel dielectric layer through an opening through the hardmask layer that is adjacent to the second pillar of hardmask material;
• and
• etching second via opening into the at least one interlevel dielectric.