Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorHoon-Sung CHOI
Life of this patent
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Abstract
A semiconductor comprises two transistors of the first conductivity type separated from two transistors of a second conductivity type by a first element isolation layer. Further, the two transistors of the first conductivity type are separated from each other by a second element isolation layer and the two transistors of the second conductivity type are separated from each other by a third element isolation layer. In example embodiments, the second and third element isolation layers are shallower than the first element isolation layer.
Claims23
A semiconductor device comprising:
- a substrate;
- a first impurity region of a first conductivity type on the substrate;
- a second impurity region of a second conductivity type on the substrate to be adjacent to the first impurity region;
- a first semiconductor layer of the second conductivity type on the first impurity region;
- a second semiconductor layer of the first conductivity type on the second impurity region;
- a first buried insulation layer on the first semiconductor layer;
- a second buried insulation layer on the second semiconductor layer;
- a third semiconductor layer on the first buried insulation layer;
- a fourth semiconductor layer on the second buried insulation layer;
- a first transistor and a second transistor on the first semiconductor layer, respectively;
- a third transistor on the second semiconductor layer;
- a first element isolation layer which separates the second transistor and the third transistor;
- and
- a second element isolation layer which separates the first transistor and the second transistor and is shallower than the first element isolation layer.
A semiconductor device comprising:
- a substrate;
- a first impurity region of a first conductivity type and a second impurity region of a second conductivity type in contact with each other on the substrate;
- a first semiconductor layer of the second conductivity type on the first impurity region;
- a second semiconductor layer of the first conductivity type on the second impurity region;
- a buried insulation layer on the first semiconductor layer and the second semiconductor layer;
- a third semiconductor layer overlapping the first semiconductor layer, and a fourth semiconductor layer overlapping the second semiconductor layer on the buried insulation layer;
- a first element isolation layer in the third semiconductor layer;
- and
- a second element isolation layer which completely separates the first semiconductor layer and the second semiconductor layer.
19-24. (canceled)
A semiconductor device comprising:
- a substrate;
- a first impurity region of a first conductivity type on the substrate;
- a second impurity region of a second conductivity type on the substrate to be adjacent to the first impurity region;
- a first semiconductor layer of the second conductivity type on the first impurity region;
- a second semiconductor layer of the first conductivity type on the second impurity region;
- a first buried insulation layer on the first semiconductor layer;
- a second buried insulation layer on the second semiconductor layer;
- a third semiconductor layer on the first buried insulation layer;
- a fourth semiconductor layer on the second buried insulation layer;
- a first transistor on the first semiconductor layer;
- a second transistor on the second semiconductor layer;
- a first element isolation layer which separates the first transistor and the second transistor;
- a second element isolation layer in the third semiconductor layer shallower than the first element isolation layer;
- and
- a first well contact connected to the first semiconductor layer, the first well contact not between the first transistor and the first element isolation layer.
(canceled)
(canceled)
Dependencies are inferred from the claim text.