Post UV Cure for Gapfill Improvement

A method for semiconductor processing, the method comprising:

• forming fins on a substrate, sidewalls of the fins and a bottom surface between the sidewalls of the fins defining a trench therebetween;
• forming a semiconductor layer in the trench and over the fins, forming the semiconductor layer comprising:
• performing a plurality of first deposition cycles and a plurality of etch cycles, each of the first deposition cycles being followed by an etch cycle of the plurality of etch cycles;
• after performing the plurality of first deposition cycles and the plurality of etch cycles, curing the semiconductor layer;
• and
• after curing, performing a second deposition cycle.

A method for semiconductor processing, the method comprising:

• forming a trench interposed between a first fin and a second fin;
• forming a semiconductor layer over the first fin and the second fin, wherein forming the semiconductor layer comprises:
• performing a first deposition process to form a layer of a first material in the trench;
• performing an etch process to remove a portion of the first material in the trench;
• repeating the first deposition process and the etch process one or more times;
• curing the first material to reduce a number of voids in the first material;
• and
• after curing the first material, performing a second deposition process to form another layer of the first material.