Spacer image transfer with double mandrel
AssigneeInternational Business Machines Corporation
InventorsYann Mignot, Yongan Xu
Life of this patent
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Abstract
A method for providing an etch mask for microelectronic processing that includes forming a material stack on a surface to be etched, wherein the material stack of at least a first material layer atop the surface to be etched for a base mandrel layer, and a second material layer atop the first material layer to provide a cap mandrel layer. If a following step, the material stack may be patterned and etched to provide double mandrel structures each including said base mandrel layer and said cap mandrel layer. A sidewall spacer is formed on sidewalls of the double mandrel structures.
Claims20
A patterning method for microelectronic devices comprising:
- forming a material stack on a surface to be etched, wherein the material stack of at least a first material layer atop the surface to be etched for a base mandrel layer, and a second material layer atop the first material layer to provide a cap mandrel layer;
- patterning the material stack to provide double mandrel structures each including said base mandrel layer and said cap mandrel layer;
- and
- forming a sidewall spacer on sidewalls of the double mandrel structures.
A patterning method for microelectronic devices comprising:
- forming a material stack on a surface to be etched, wherein the material stack of at least a first material layer atop dielectric layers to be etched for a base mandrel layer, and a second material layer atop the first material layer to provide a cap mandrel layer;
- patterning the material stack to provide double mandrel structures each including said base mandrel layer and said cap mandrel layer;
- forming a sidewall spacer on sidewalls of the double mandrel structures;
- etching trenches in the dielectric layers using the double mandrel structures and sidewall spacers;
- and
- filling the trenches with an electrically conductive material to provide metal lines.
A patterning method for microelectronic devices comprising:
- forming a material stack on a surface to be etched, wherein the material stack of at least a first material layer atop semiconductor layers to be etched for a base mandrel layer, and a second material layer atop the first material layer to provide a cap mandrel layer;
- patterning the material stack to provide double mandrel structures each including said base mandrel layer and said cap mandrel layer;
- forming a sidewall spacer on sidewalls of the double mandrel structures;
- and
- etching fins in the semiconductors layers using the double mandrel structures and sidewall spacers.
Dependencies are inferred from the claim text.