Methods of protecting structure of integrated circuit from rework

A method of protecting an opening profile of an integrated circuit from rework, the method comprising:

• forming a first layer on a second layer, the first or second layer being a titanium nitride (TiN) layer;
• forming an over-layer stack on the first layer, the over-layer stack comprising a resist layer having one or more resist openings;
• forming one or more first openings through the first layer at the one or more resist openings, the one or more first openings defining the opening profile of the integrated circuit, and exposing the top surface of the second layer;
• removing at least a portion of the over-layer stack;
• selectively growing cobalt (Co) or ruthenium (Ru) within the one or more first openings, thereby forming one or more first plugs;
• removing any remaining portion of the over-layer stack;
• forming one or more final openings in the first layer in the first layer while the one or more first openings in the first layer are protected by the one or more first plugs;
• and
• removing the one or more first plugs.