Amorphous metal hot electron transistor

A device, comprising:

• a substrate;
• an amorphous metal layer on the substrate, the amorphous metal layer having a length extending along a first direction and a width extending along a second direction that is transverse to the first direction;
• a tunneling oxide layer on the amorphous metal layer;
• an emitter electrode on the tunneling oxide layer, the emitter electrode overlapping a first portion of the amorphous metal layer, the emitter electrode having a length extending along the second direction and a width extending along the first direction;
• a base electrode on the tunneling oxide layer, the base electrode overlapping a second portion of the amorphous metal layer, the base electrode having a length extending along the second direction and a width extending along the first direction;
• an insulator on the emitter electrode and the base electrode;
• and
• a collector electrode on the insulator, the collector electrode overlapping the base electrode and the second portion of the amorphous metal layer.

A method, comprising:

• forming an amorphous metal layer on a non-conducting substrate;
• forming a first conformal dielectric layer over the amorphous metal layer;
• forming a first conductive layer on the first conformal dielectric layer;
• forming an emitter terminal and a base terminal by patterning the first conductive layer;
• forming a second conformal dielectric layer over the emitter and base terminals;
• patterning openings in the second conformal dielectric layer;
• forming contacts to the emitter and the base terminals by filling the openings with a second conductive layer;
• and
• forming a collector terminal by patterning the second conductive layer.

A device, comprising:

• a substrate;
• an amorphous metal layer on the substrate;
• a first insulator on the amorphous metal layer;
• a first electrode on the first insulator and overlapping a first portion of the amorphous metal layer;
• a second electrode on the first insulator and overlapping a second portion of the amorphous metal layer;
• a second insulator;
• a first contact through the second insulator and coupled to the first electrode;
• a second contact through the second insulator and coupled to the second electrode;
• and
• a third electrode on the second insulator and overlapping the second portion of the amorphous metal layer.