Monoorganoaminodisilane Precursors and Methods for Depositing Films Comprising Same

A composition comprising:

• (a) at least one monoorganoaminodisilane represented by Formula I:
• wherein R1 is selected from the group consisting of a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing group, and a C6 to C10 aryl group;
• R2 is selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C6 alkenyl group, a linear or branched C3 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, an electron withdrawing group, and a C4 to C10 aryl group, optionally wherein R1 and R2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring;
• and R3-5 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C6 alkenyl group, a linear or branched C3 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, an electron withdrawing group, and a C4 to C10 aryl group, with the proviso that R3-5 cannot be all hydrogen;
• and
• (b) a solvent, wherein the solvent has a boiling point, wherein the difference between the boiling point of the solvent and that of the at least one monoorganoaminodisilane is 40° C. or less, and wherein the composition is substantially free of halide ions.

A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising:

• providing the at least one surface of the substrate in a reaction chamber;
• introducing at least one monoorganoaminodisilane having a structure of Formula I:
• wherein R1 is selected from the group consisting of a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing group, and a C6 to C10 aryl group;
• R2 is selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C6 alkenyl group, a linear or branched C3 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, an electron withdrawing group, and a C4 to C10 aryl group, optionally wherein R1 and R2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring;
• and R3-5 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C6 alkenyl group, a linear or branched C3 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, an electron withdrawing group, and a C4 to C10 aryl group, with the proviso that R3-5 cannot be all hydrogen;
• and
• introducing a nitrogen-containing source into the reactor wherein the at least one monoorganoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface, wherein the monoorganoaminodisilane is substantially free of halide ions.

A method of forming a silicon-containing film wherein the film is selected from an amorphous and a crystalline film from a deposition process selected from by plasma enhanced atomic layer deposition and plasma enhanced cyclic chemical vapor deposition, the method comprising:

• placing one or more substrates into a reactor which is heated to a one or more temperatures ranging from ambient temperature to about 700° C.;
• introducing at least one monoorganoaminodisilane precursor comprising a compound having Formula I below:
• wherein R1 is selected from the group consisting of a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing group, and a C6 to C10 aryl group;
• R2 is selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C6 alkenyl group, a linear or branched C3 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, an electron withdrawing group, and a C4 to C10 aryl group, optionally wherein R1 and R2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring;
• and R3-5 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C6 alkenyl group, a linear or branched C3 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, a linear or branched C1 to C6 fluorinated alkyl group, an electron withdrawing group, and a C4 to C10 aryl group, with the proviso that R3-5 cannot be all hydrogen and wherein the monoorganoaminodisilane is substantially free of halide ions;
• purging the reactor with a purge gas;
• providing a plasma source into the reactor to at least partially react with the at least one monoorganoaminodisilane precursor and deposit a silicon-containing film onto the one or more substrates;
• and
• purging the reactor with a purge gas.