Method of forming a structure on a substrate
AssigneeASM IP Holding B.V.
InventorsTimothee Blanquart, David de Roest
Life of this patent
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Abstract
The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.
Claims20
A method of providing a structure by depositing a layer on a substrate in a reactor, the method comprising:
- introducing a silicon halide precursor selected from the group consisting of SiI4, HSiI3, H2SiI2, H3SiI, Si2I6, H2Si2I4, H3Si2I3, H4Si2I2, H5Si2I, Si3I8, and one or more cyclic compounds in the reactor;
- introducing a reactant gas comprising oxygen in the reactor;
- and,
- providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the silicon halide precursor to form a layer comprising silicon dioxide.
A method of providing a structure by depositing a layer on a substrate in a reactor, the method comprising:
- introducing a silicon halide precursor, wherein the silicon halide precursor has a general formula:
- H2n+2−y−zSinXyAz, (1)
- wherein, n=1-10, y=1 or more and up to 2n+2−z, z=0 or more and up to 2n+2−y, X is I or Br, and A is a halogen other than X;
- or
- H2n+2−y−zSinXyAz, (2)
- wherein the formula (2) compound is cyclic compound, n=3-10, y=1 or more and up to 2n−z, z=0 or more and up to 2n−y, X is I or Br, and A is a halogen other than X,
- and wherein the silicon halide comprises at least one hydrogen;
- introducing a reactant gas comprising oxygen in the reactor;
- and,
- providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the silicon halide precursor to form a layer comprising silicon dioxide.
Dependencies are inferred from the claim text.