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AssigneesTokyo Electron Limited, MKS Instruments, Inc.
InventorsYusuke Yoshida, Sergey Voronin, Alok Ranjan, David J. Coumou, Scott E. White
Estimating the term…
Multiple harmonic frequency components are used for plasma excitation in a plasma process. Relative amplitude and/or phase shift between the different frequency components is controlled so as to provide desired ion energy plasma properties. The relative amplitude and/or phase shift may be controlled without direct and/or manual ion energy measurements. Rather, the ion energy within the plasma may be dynamically controlled by monitoring one or more electrical characteristics within the plasma apparatus, such as for example, impedance levels, electrical signals in the radio frequency (RF) generator, electrical signals in a the matching networks, and electrical signals in other circuits of the plasma processing apparatus. The monitoring and control of the ion energy may be accomplished dynamically during the plasma process so as to maintain a desired ion energy distribution.
A plasma processing system capable of plasma processing a substrate, comprising:
A method for plasma processing a substrate, comprising:
A method for plasma processing a substrate, comprising:
Dependencies are inferred from the claim text.