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AssigneeWuhan Xinxin Semiconductor Manufacturing Co., Ltd.
InventorsYuan TANG, Zhifeng MAO, Yi XU, Hung-Yu CHANG, Jen-Tai HSU
Estimating the term…
A charge pump drive circuit is disclosed. The charge pump drive circuit provides a switch signal to a charge pump which provides a memory with a read voltage and a read current. The charge pump drive circuit includes a read drive circuit and a standby drive circuit. The read drive circuit is powered by a first power supply and provides the charge pump with a switch signal when the memory is in an active reading state. The standby drive circuit is powered by a second power supply and provides the charge pump with a switch signal when the memory is in a read standby state. The first power supply provides a voltage level ranging from 1.6 V to 3.8 V, and the second power supply provides a voltage level of 1.5 V.
A charge pump drive circuit for providing a charge pump with a switch signal, the charge pump configured to provide a memory with a read voltage and a read current, the charge pump drive circuit comprising a read drive circuit and a standby drive circuit, wherein:
A charge pump drive circuit for providing a charge pump with a switch signal, the charge pump configured to provide a memory with a read voltage and a read current, the charge pump drive circuit comprising a read drive circuit, a standby drive circuit and an OR gate, wherein:
Dependencies are inferred from the claim text.