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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsSelina LA BARBERA, Niccolo CASTELLANI, Gabriele NAVARRO, Elisa VIANELLO
Estimating the term…
A method for programming a phase change memory cell placed in an initial crystalline state, the memory cell being called of taking a plurality of resistance values belonging to a range of values called “programming window”, the method including parameterizing a lower limit of the programming window by applying to the memory cell a single gradual writing voltage pulse or a first series of identical gradual writing voltage pulses; progressively adjusting the resistance value of the memory cell by the following operations: a gradual erasing operation during which a series of identical gradual erasing voltage pulses is applied to the memory cell; a gradual writing operation during which a second series of identical gradual writing voltage pulses is applied to the memory cell; the gradual writing and gradual erasing voltage pulses have a width less than 50 ns.
A method for programming a phase change memory cell placed in an initial crystalline state, the memory cell being capable of taking a plurality of resistance values belonging to a range of values forming a programming window, the method comprising:
Dependencies are inferred from the claim text.