Memory management method, memory storage device and memory control circuit unit
AssigneePhison Electronics Corp.
InventorsChe-Yueh Kuo, Wen-Jin Li
Life of this patent
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Abstract
A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.
Claims21
A memory management method for a memory storage device including a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, at least one first-type physical unit among the physical units stores first data, the first data corresponds to a plurality of logical units, and the memory management method comprises:
- performing at least one data merge operation for at least one of the physical units according to a write command from a host system;
- and
- adjusting times of performing the at least one data merge operation according to a dispersion rate of the logical units corresponding to the first data.
A memory storage device, comprising:
- a connection interface unit, configured to be coupled to a host system;
- a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, at least one first-type physical unit among the physical units stores first data, and the first data corresponds to a plurality of logical units;
- and
- a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
- wherein the memory control circuit unit is configured to instruct to perform at least one data merge operation for at least one of the physical units according to a write command from the host system,
- wherein the memory control circuit unit is further configured to adjust times of performing the at least one data merge operation according to a dispersion rate of the logical units corresponding to the first data.
A memory control circuit unit for controlling a rewritable non-volatile memory module, comprising:
- a host interface configured to be coupled to a host system;
- a memory interface configured to be coupled to the rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, at least one first-type physical unit among the physical units stores first data, and the first data corresponds to a plurality of logical units;
- and
- a memory management circuit, coupled to the host interface and the memory interface,
- wherein the memory management circuit is configured to perform at least one data merge operation for at least one of the physical units according to a write command from the host system,
- wherein the memory management circuit is further configured to adjust times of performing the at least one data merge operation according to a dispersion rate of the logical units corresponding to the first data.
Dependencies are inferred from the claim text.