Wear leveling method, memory control circuit unit and memory storage apparatus

A memory control circuit unit for controlling a rewritable non-volatile memory module, the writable non-volatile memory module comprising a plurality of physical erasing units, the memory control circuit unit comprising:

• a host interface, coupled to a host system;
• a memory interface, coupled to the rewritable non-volatile memory module;
• and
• a memory management circuit, coupled to the host interface and the memory interface,
• wherein the memory manage circuit is configured for recording an operation value of each of the physical erasing units, wherein the operation values are configured for reflecting absolute or relative erasing or programming counts of the physical erasing units,
• wherein the memory manage circuit is further configured for recording a usage situation value of each of the physical erasing units, wherein the usage situation values are configured for reflecting absolute or relative no operation time lengths of the physical erasing units,
• wherein the memory management circuit is further configured for selecting a first physical erasing unit and a second physical erasing unit from the physical erasing units according the operation values of the physical erasing units and the usage situation values of the physical erasing units and copying valid data stored in the first physical erasing unit to the second physical erasing unit,
• wherein the memory management circuit is further configured for grouping the physical erasing units at least into a first area and a second area,
• wherein the memory management circuit is further configured for selecting a third physical erasing unit from the physical erasing units of the second area,
• wherein the memory management circuit is further configured for sending a write command sequence which instructs a writing of data from a host system into the third physical erasing unit,
• wherein the memory management circuit is further configured for associating the third physical erasing unit with the first area,
• wherein the memory management circuit is further configured for setting the usage situation value of the third physical erasing unit as a usage situation default value and counting the usage situation values of the rest of the physical erasing units of the first area.

A memory storage apparatus, comprising:

• a connection interface unit, coupled to a host system;
• a rewritable non-volatile memory module, comprising a plurality of physical erasing units;
• and
• a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory control circuit unit is configured for recording an operation value of each of the physical erasing units, wherein the operation values are configured for reflecting absolute or relative erasing or programming counts of the physical erasing units,
• wherein the memory control circuit unit is further configured for recording a usage situation value of each of the physical erasing units, wherein the usage situation values are configured for reflecting absolute or relative no operation time lengths of the physical erasing units, and
• wherein the memory control circuit unit is further configured for selecting a first physical erasing unit and a second physical erasing unit from the physical erasing units according the operation values of the physical erasing units and the usage situation values of the physical erasing units and copying valid data stored in the first physical erasing unit to the second physical erasing unit,
• wherein the memory control circuit unit is further configured for grouping the physical erasing units at least into a first area and a second area,
• wherein the memory control circuit unit is further configured for selecting a third physical erasing unit from the physical erasing units of the second area,
• wherein the memory control circuit unit is further configured for sending a write command sequence which instructs a writing of data from a host system into the third physical erasing unit,
• wherein the memory control circuit unit is further configured for associating the third physical erasing unit with the first area,
• wherein the memory control circuit unit is further configured for setting the usage situation value of the third physical erasing unit as a usage situation default value and counting the usage situation values of the rest of the physical erasing units of the first area.