Electro-optical device and electronic apparatus

Abstract

In an electro-optical device, inside an insulating layer, a cavity is provided which extend in a thickness direction at both sides in a width direction of a semiconductor layer and at both sides in a length direction of the semiconductor layer and surround the semiconductor layer in a plan view. The cavity is provided, in the thickness direction, from a position on the first substrate side relative to the semiconductor layer to a position on a pixel electrodes side relative to the semiconductor layer. The semiconductor layer is positioned behind at least one of a second light-shielding layer and the cavity when viewed from any direction on the first substrate side. The cavity is provided up to a position on the pixel electrode side relative to a gate electrode provided at the pixel electrode side relative to the semiconductor layer of a transistor, toward the pixel electrodes.

Dependencies are inferred from the claim text.