Optical integrated circuits
AssigneeSamsung Electronics Co., Ltd.
InventorsKeun-Yeong CHO, Ho-Chul JI
Life of this patent
Estimating the term…
Abstract
Optical integrated circuits are provided. An optical integrated circuit includes a substrate including a single crystalline semiconductor material. The optical integrated circuit includes an insulation region in a trench in the substrate. The optical integrated circuit includes a first core on the insulation region. The first core includes the single crystalline semiconductor material. Moreover, the optical integrated circuit includes a second core that is spaced apart from the first core. The second core includes a material having a refractive index that is lower than that of the first core.
Claims20
An optical integrated circuit comprising:
- a substrate comprising a single crystalline semiconductor material;
- an insulation region in a trench in the substrate;
- an active device comprising a first core on the insulation region, the first core comprising the single crystalline semiconductor material;
- and
- a passive device comprising a second core that is spaced apart from the first core,
- wherein the second core comprises a material comprising a refractive index that is lower than that of the first core.
An optical integrated circuit comprising:
- a substrate comprising single crystalline silicon;
- a first insulation region in a trench in the substrate;
- a first core directly contacting an upper surface of the first insulation region and comprising single crystalline silicon, an entirety of a lowermost surface of the first core overlapping the first insulation region in a vertical direction that is substantially perpendicular to an upper surface of the substrate;
- and
- a second insulation region on the substrate and the first insulation region, and on an upper surface and side surfaces of the first core;
- and
- a second core on the second insulation region, the second core at least partially overlapping the first core in the vertical direction and comprising silicon nitride.
An optical integrated circuit comprising:
- a single crystalline semiconductor substrate;
- a first insulation region in a trench in the single crystalline semiconductor substrate;
- a single crystalline semiconductor region contacting an upper surface of the first insulation region, wherein an entirety of a lowermost surface of the single crystalline semiconductor region overlaps the first insulation region in a vertical direction that is substantially perpendicular to an upper surface of the single crystalline semiconductor substrate;
- a material contacting the upper surface of the first insulation region and comprising a refractive index that is lower than that of the single crystalline semiconductor region and higher than that of the first insulation region, wherein an entirety of a lowermost surface of the material overlaps the first insulation region in the vertical direction, and wherein the material is spaced apart from the single crystalline semiconductor region in a horizontal direction that is substantially parallel to the upper surface of the single crystalline semiconductor substrate;
- and
- a second insulation region on the single crystalline semiconductor substrate and the first insulation region, and on the material and the single crystalline semiconductor region, wherein the refractive index of the material is higher than that of the second insulation region.
Dependencies are inferred from the claim text.