Vapor phase growth apparatus and vapor phase growth method

A vapor phase growth method comprising:

• loading a plurality of substrates to n reactors;
• distributing a predetermined amount of first process gas including a group-III element and starting the first process gas supply to the n reactors at the same time at a flow rate controlled on the basis of control values of a first flow rate;
• distributing a predetermined amount of second process gas including a group-V element and starting second process gas supply to the n reactors at the same time at a flow rate controlled on the basis of control values of a second flow rate;
• controlling independently at least one predetermined process parameter of the n reactors, on the basis of control values of the at least one predetermined process parameter, and growing films on the plurality of substrates in the n reactors at the same time;
• shutting off the first process gas supply to the n reactors at the same time;
• and
• shutting off the second process gas supply to the n reactors at the same time.