P-type sic epitaxial wafer and production method therefor

A method of producing a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×1018 cm−3, the method comprising:

• a step of setting an input raw material C/Si ratio, which is a ratio between C element and Si element in a feedstock gas,
• a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×1018 cm−3 by forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, and
• a sub-step of setting the input raw material C/Si ratio based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, wherein
• the input raw material C/Si ratio differs from the total gas C/Si ratio, and
• the input raw material C/Si ratio is 0.8 or less.