Loading patent…
AssigneeCrystal IS, Inc.
InventorsSandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
Estimating the term…
In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
-15. (canceled)
A doped single-crystalline structure comprising Al1-xSixN, wherein the doped single-crystalline structure (i) has a conductivity greater than approximately 10−2 Ω−1 cm−1 at room temperature, (ii) has the form of a wafer having a thickness no less than 100 μm, and (iii) has a diameter no less than 1 cm.
A single-crystalline bulk AlN crystal having (i) a conductivity greater than approximately 10−2 Ω−1 cm−1 at room temperature, (ii) the form of a wafer having a thickness no less than 100 μm, and (iii) a diameter no less than 1 cm.
An AlN single crystal having (i) a thickness no less than 100 μm, (ii) a diameter no less than 1 cm, and (iii) a coefficient of optical absorption no more than 20 cm−1 over the entire wavelength range of 215 nm to 4500 nm.
Dependencies are inferred from the claim text.