Apparatus for semiconductor wafer processing

A Spatial Atomic Layer Deposition (SALD) apparatus, wherein the SALD-apparatus includes:

• a susceptor having a substrate support surface on which substrates can be placed;
• and
• a showerhead having a showerhead side hat extends substantially parallel to the substrate support surface to form a gap between the substrate support surface and the showerhead side;
• wherein the susceptor and the showerhead are rotatable relative to each other around a central axis of rotation (A) that intersects a center of the showerhead and that extends substantially perpendicularly to the substrate support surface;
• wherein the showerhead includes a plurality gas channels, wherein each gas channel is fluidly connected with at least one showerhead section opening in the showerhead that opens into the gap for at least one of supplying gas into and exhausting gas from the gap, wherein each gas channel with the at least one showerhead section opening to which it is fluidly connected defines a showerhead section so that the showerhead includes a plurality of showerhead sections;
• wherein the SALD-apparatus comprises a plurality of multi-way valve assemblies, each multi-way valve assembly being fluidly connected to one gas channel of the plurality of gas channels of the showerhead, wherein each multi-way valve assembly is switchable to fluidly connect the respective gas channel that is fluidly connected to the multi-way valve assembly with a selected one of a plurality of different gas sources which supply different types of gas.