Semiconductor device
AssigneeDenso Corporation
InventorsTakahiro HIGUCHI, Yusuke KAWAI, Sumio ITO
Life of this patent
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Abstract
A semiconductor device includes: a silicon layer in which a trench is disposed; a surface structure portion disposed on the silicon layer at a position distant from the trench and having a surface provided by a metal layer; and a low electric conductivity portion disposed on the surface of the metal layer or in a part of the resist disposed on the trench side of the metal layer, and having an electric conductivity lower than at least a part of the metal layer covering a trench side portion of the surface of the metal layer.
Claims8
A semiconductor device comprising:
- a silicon layer in which a trench is disposed;
- a surface structure portion disposed on the silicon layer at a position distant from the trench and having a surface provided by a metal layer;
- and
- a low electric conductivity portion disposed on the surface of the metal layer and having an electric conductivity lower than at least a part of the metal layer covering a trench side portion of the surface of the metal layer.
A method for manufacturing a semiconductor device in which a trench is formed in a silicon layer, the method comprising:
- preparing the silicon layer;
- forming a surface structure portion having a surface provided by a metal layer on the silicon layer at a position spaced apart from a trench-to-be-formed region where the trench is to be formed;
- forming a resist on the surface structure portion and the silicon layer;
- removing a part of the resist corresponding to the trench-to-be-formed region;
- forming the trench by etching the silicon layer by a Bosch process using the resist as a mask;
- and
- arranging a low electric conductivity portion having an electric conductivity lower than the metal layer on an upper surface of at least a part of the metal layer disposed on a trench-to-be-formed region side or in a part of the resist disposed on the trench-to-be-formed region side of the metal layer after the forming of the surface structure portion, wherein:
- the forming of the trench is performed under a state where the low electric conductivity portion is arranged.
Dependencies are inferred from the claim text.