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US 2019/0314937 A1Published application
Sn Whisker Growth Mitigation Using NiO Sublayers
AssigneeThe University of Toledo
InventorsVamsi Borra, Daniel G. Georgiev, Srikanth Itapu
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Abstract
Semiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described.
Claims33
An electronic device comprising:
- a substrate;
- a first metal layer on the substrate;
- a semiconductor layer comprising NiO on the first metal layer;
- and
- a second metal layer on the semiconductor layer.
2 more elements
An electronic device comprising:
- a substrate;
- a semiconductor layer comprising NiO directly on the substrate;
- and
- a metal layer directly on the semiconductor layer.
1 more element
A method for making an electronic device, the method comprising:
- depositing a semiconductor layer comprising NiO on a substrate;
- and
- depositing a metal layer on the semiconductor layer;
- wherein the semiconductor layer substantially prevents the growth of whiskers on the metal layer.
1 more element
A kit comprising:
- a first container housing a solder comprising Sn;
- and
- a second container housing a source of nickel and a solution.
Dependencies are inferred from the claim text.