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US 2019/0309411 A1Published application
Method and system for low temperature ald
AssigneeRASIRC, Inc.
InventorsJeffrey J. Spiegelman, Daniel Alvarez, JR., Jian Yang, Russell J. Holmes, Edward Heinlein, Christopher Ramos, Jeremiah Trammel
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Abstract
A method and chemical delivery system are provided for low temperature atomic layer deposition. Thus, methods of forming nitrogen-containing thin films by atomic layer deposition using a substantially water free hydrazine gas and plasma treatment are provided.
Claims26
A method of growing a thin film comprising:
- (a) providing a substrate within a chamber heated to about 300° C.-410° C.;
- (b) pre-treating the substrate with anhydrous hydrazine, thereby creating silicon nitride bonds on a surface of the substrate;
- and
- (c) performing a cycle for layer deposition on the pre-treated substrate, wherein the cycle comprises:
- (i) exposing the substrate to one or more silicon precursors;
- (ii) thereafter, exposing the substrate to anhydrous hydrazine;
- and
- (iii) thereafter, exposing the substrate to plasma,
- thereby depositing a layer of SiN onto the surface of the substrate, wherein the deposited layer forms a film that is substantially oxygen free.
6 more elements
A method of growing a thin film comprising:
- (a) providing a substrate within a chamber heated to about 300° C.-410° C.;
- (b) pre-treating the substrate with anhydrous hydrazine, thereby creating silicon nitride bonds on a surface of the substrate;
- and
- (c) performing a cycle for layer deposition on the pre-treated substrate, wherein the cycle comprises:
- (i) exposing the substrate to one or more titanium precursors;
- (ii) thereafter, exposing the substrate to anhydrous hydrazine;
- and
- (iii) thereafter, exposing the substrate to plasma,
- thereby depositing a layer of TiN onto the surface of the substrate, wherein the deposited layer forms a film that is substantially oxygen free.
6 more elements
Dependencies are inferred from the claim text.