Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
AssigneeQorvo US, Inc.
InventorsDerya Deniz, Robert Kraft, John Belsick
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Abstract
Methods for depositing bulk layer crystalline material having a predetermined c-axis tilt on a substrate include a first step of depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and a second step of depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.
Claims21
A method for preparing a crystalline bulk layer having a c-axis tilt, the method comprising:
- depositing a first portion of a bulk material layer onto a substrate at a first incidence angle, the first portion having a first c-axis tilt;
- depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle, the second portion having a second c-axis tilt that substantially aligns with the first c-axis tilt.
A structure comprising:
- a substrate comprising a wafer or a portion thereof;
- a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the bulk material layer having a c-axis tilt of about 32 degrees or greater.
Dependencies are inferred from the claim text.