US 2019/0296226 A1 · MAGNETIC DEVICE AND MANUFACTURING METHOD OF MAGNETIC DEVICE

Abstract

According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.

Claims20

Dependent claims

A magnetic device comprising a magnetoresistive effect element, the magnetoresistive effect element including:

a first ferromagnet;
a conductor;
and
an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

16/123,846Filed 6 Sep 2018

Priority

JP 2018-05309520 Mar 2018

Published

26 Sep 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10N 50/80
Galvanomagnetic devices: constructional details
G11C 11/161
Using elements in which the storage effect is based on magnetic spin effect: details concerning the memory cell structure, e.g. the layers of the…
H10B 61/22
Comprising components having three or more electrodes, e.g. transistors: of the field-effect transistor [FET] type
H10N 50/01
Galvanomagnetic devices: manufacture or treatment

Magnetic device and manufacturing method of magnetic device

Life of this patent

Magnetic device and manufacturing method of magnetic device

Life of this patent

Abstract

Claims20