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US 2019/0296220 A1Published application
Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer
AssigneeSpin Transfer Technologies, Inc.
InventorSatoru Araki
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Abstract
A Magnetic Tunnel Junction (MTJ) can include an annular structure and a planar reference magnetic layer disposed about the annular structure. The annular structure can include an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular nonmagnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer. The planar reference magnetic layer can be separated from the free magnetic layer by the annular tunnel barrier layer.
Claims22
A Magnetic Tunnel Junction (MTJ) comprising:
- an annular structure including an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer;
- a planar reference magnetic layer disposed about the annular structure and separated from the free magnetic layer by the annular tunnel barrier layer.
A device comprising:
- a plurality of annular structures, each annular structure including an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer;
- a planar reference magnetic layer disposed about the plurality of annular structures and separated from the free magnetic layers by the annular tunnel barrier layers.
A memory device comprising:
- an array of Magnetic Tunnel Junction (MTJ) cells including:
- a plurality of annular structures arranged in columns and rows, each annular structure including an annular non-magnetic layer disposed about an annular conductive layer, an annular free magnetic layer disposed about the annular non-magnetic layer, and an annular tunnel insulator disposed about the annular free magnetic layer;
- and
- a planar reference magnetic layer disposed about the plurality of annular structures and separated from the free magnetic layers by the annular tunnel barrier layers;
- a bit line coupled to the planar reference magnetic layer;
- and
- a plurality of select transistors, each select transistor coupled to the annular conductive layer of a respective annular structure.
4 more elements
Dependencies are inferred from the claim text.