Display device including a cmos transistor and method of manufacturing the same

A method for manufacturing a display device, the method comprising:

• forming a semiconductor pattern including a first semiconductor area and a second semiconductor area on a base substrate;
• forming a first insulation layer covering the semiconductor pattern;
• forming a gate metal layer on the first insulation layer;
• etching the gate metal layer to form a gate pattern at least partially overlapping the first semiconductor area;
• doping a first area of the first semiconductor area with a high concentration of n-type impurities to form a high-concentration-doped area;
• etching the gate pattern to form a first gate electrode having a taper angle smaller than a taper angle of the gate pattern;
• doping a second area of the first semiconductor area, contacting the first area of the first semiconductor area, with a low concentration of n-type impurities to form a low-concentration-doped area;
• etching the gate metal layer to form a second gate electrode at least partially overlapping the second semiconductor area and having a taper angel larger than the taper angle of the first gate electrode;
• and
• doping the second semiconductor area with p-type impurities to form a p-doped area.