Semiconductor device and manufacturing method of semiconductor device
AssigneeDenso Corporation
InventorEisuke BANNO
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Abstract
In a semiconductor device, an insulating film is disposed between an upper surface of a substrate and a floating gate of a flash memory, a first oxide film is disposed directly above the floating gate, a silicon nitride film is disposed on an upper surface of the first oxide film, and a second oxide film made of silicon oxide film is disposed on an upper surface of the silicon nitride film.
Claims23
A semiconductor device comprising:
- a substrate;
- a memory region in which a flash memory that stores information by accumulating charges in a floating gate is formed,
- an insulating film disposed between an upper surface of the substrate and the floating gate;
- a first oxide film disposed directly above the floating gate;
- a silicon nitride film disposed on an upper surface of the first oxide film;
- and
- a second oxide film made of silicon oxide film and disposed on an upper surface of the silicon nitride film, wherein
- at least above the floating gate, a film thickness of the second oxide film is equal to or more than a film thickness of the silicon nitride film.
A semiconductor device comprising:
- a substrate;
- a memory region in which a flash memory that stores information by accumulating charges in a floating gate is formed;
- an insulating film disposed between an upper surface of the substrate and the floating gate;
- a first oxide film disposed directly above the floating gate;
- a silicon nitride film disposed on an upper surface of the first oxide film;
- and
- a second oxide film made of silicon oxide film and disposed on an upper surface of the silicon nitride film, wherein
- the silicon nitride film has a refractive index between 1.88 and 1.918 inclusive.
A manufacturing method of a semiconductor device including a memory region in which a flash memory that stores information by accumulating charges in a floating gate is formed, the manufacturing method comprising:
- forming an insulating film on an upper surface of a substrate;
- forming the floating gate on an upper surface of the insulating film;
- forming a first oxide film directly above the floating gate;
- forming a silicon nitride film on an upper surface of the first oxide film using SiH4 gas and N2 gas as raw materials;
- and
- forming a second oxide film made of silicon oxide film on an upper surface of the silicon nitride film with a film thickness equal to or more than a film thickness of the silicon nitride film.
A manufacturing method of a semiconductor device including a memory region in which a flash memory that stores information by accumulating charges in a floating gate is formed, the manufacturing method comprising:
- forming an insulating film on an upper surface of a substrate;
- forming the floating gate on an upper surface of the insulating film;
- forming a first oxide film on an upper surface of the floating gate;
- forming a silicon nitride film on an upper surface of the first oxide film using SiH4 gas and N2 gas as raw materials;
- forming a second oxide film on an upper surface of the silicon nitride film;
- and
- forming a third oxide film on an upper surface of the second oxide film at a film forming temperature of 300° C. or less.
A manufacturing method of a semiconductor device including a memory region in which a flash memory that stores information by accumulating charges in a floating gate is formed, the manufacturing method comprising:
- forming an insulating film on an upper surface of a substrate;
- forming the floating gate on an upper surface of the insulating film;
- forming a first oxide film directly above the floating gate;
- forming a silicon nitride film on an upper surface of the first oxide film using SiH4 gas and N2 gas as raw materials;
- and
- forming a second oxide film made of silicon oxide film on an upper surface of the silicon nitride film, wherein
- the forming the silicon nitride film includes adjusting a gas ratio of the SiH4 gas and the N2 gas so that the silicon nitride film has a refractive index between 1.88 and 1.918 inclusive.
A manufacturing method of a semiconductor device including a memory region in which a flash memory that stores information by accumulating charges in a floating gate is formed, the manufacturing method comprising:
- forming an insulating film on an upper surface of a substrate;
- forming the floating gate on an upper surface of the insulating film;
- forming a first oxide film directly above the floating gate;
- forming a silicon nitride film on an upper surface of the first oxide film using SiH4 gas and N2 gas as raw materials;
- and
- forming a second oxide film made of silicon oxide film on an upper surface of the silicon nitride film, wherein
- the forming the silicon nitride film includes performing plasma igniting after introducing the SiH4 gas and the N2 gas into an atmosphere to form the silicon nitride film by plasma CVD.
A manufacturing method of a semiconductor device including a memory region in which a flash memory that stores information by accumulating charges in a floating gate is formed, the manufacturing method comprising:
- forming an insulating film on an upper surface of a substrate;
- forming the floating gate on an upper surface of the insulating film;
- forming an oxide film on an upper surface of the floating gate;
- and
- forming a silicon nitride film on an upper surface of the oxide film using SiH4 gas and N2 gas as raw materials, wherein
- forming the silicon oxide film includes setting an amount of the SiH4 gas introduced into an atmosphere at a beginning of film formation between 115/4500 cm3 and 125/4500 cm3 inclusive with respect to 1 cm3 of the N2 gas.
Dependencies are inferred from the claim text.