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US 2019/0296024 A1Published application
Semiconductor device including ultra low-k spacer and method for fabricating the same
AssigneeSK hynix Inc.
InventorsYun-Hyuck JI, Beom-Ho MUN, In-Sang KIM
Life of this patent
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Abstract
A semiconductor device includes a bit line structure including a bit line contact plug and a bit line on the bit line contact plug, a storage node contact plug, an ultra low-k spacer including a gap-fill spacer contacting a side wall of the bit line contact plug and a line-type spacer contacting a side wall of the bit line, and a low-k spacer formed on the line-type spacer of the ultra low-k spacer to contact the storage node contact plug, wherein the gap-fill spacer is thicker than the line-type spacer.
Claims20
A semiconductor device, comprising:
- a bit line structure including a bit line contact plug and a bit line on the bit line contact plug;
- a storage node contact plug;
- an ultra low-k spacer including a gap-fill spacer contacting a side wall of the bit line contact plug and a line-type spacer contacting a side wall of the bit line;
- and
- a low-k spacer formed on the line-type spacer of the ultra low-k spacer to contact the storage node contact plug,
- wherein the gap-fill spacer is thicker than the line-type spacer.
3 more elements
A semiconductor device, comprising:
- a first pattern structure and a second pattern structure;
- and
- a multilayer spacer separating the first and second pattern structures,
- wherein the multilayer spacer includes an ultra low-k spacer contacting a side wall of the first pattern structure;
- and
- a low-k spacer which is formed on the ultra low-k spacer and contacts the second pattern structure.
3 more elements
Dependencies are inferred from the claim text.