Semiconductor devices including support patterns
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Hoon SONG, Kiheum NAM, Wonchul LEE
Life of this patent
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Abstract
A semiconductor device includes a plurality of pillar structures on a semiconductor substrate, and a support pattern in contact with at least a part of each of the pillar structures, the support pattern connecting the pillar structures with one another, wherein the support pattern includes support holes exposing side surfaces of the pillar structures, the support holes including at least a first support hole and a second support hole that are spaced apart from each other, the first and second support holes having different shapes from each other.
Claims21
-20. (canceled)
A semiconductor device, comprising:
- bottom electrodes on a semiconductor substrate, the semiconductor substrate including a cell region and a dummy region;
- and
- a support pattern in contact with at least a part of each of the bottom electrodes, the support pattern connecting the bottom electrodes with one another,
- wherein the support pattern includes support holes exposing side surfaces of the bottom electrodes, the support holes including first support holes and second support holes that are spaced apart from each other, the first and second support holes having different shapes from each other, and
- wherein the second support holes are only at an edge portion of the cell region.
A semiconductor device, comprising:
- bottom electrodes on a semiconductor substrate, the semiconductor substrate including a cell region and a dummy region;
- and
- a support pattern in contact with at least a part of each of the bottom electrodes, the support pattern connecting the bottom electrodes with one another,
- wherein the support pattern includes support holes exposing side surfaces of the bottom electrodes,
- wherein the bottom electrodes include memory bottom electrodes on the cell region and dummy bottom electrodes on the dummy region and on an edge of the cell region, only the memory bottom electrodes of the bottom electrodes to perform a memory function, and
- wherein one of the support holes exposes at least one of the dummy bottom electrodes and at least one of the memory bottom electrodes.
A semiconductor device, comprising:
- bottom electrodes on a semiconductor substrate, the semiconductor substrate including a cell region and a dummy region;
- and
- a support pattern in contact with at least a part of each of the bottom electrodes, the support pattern connecting the bottom electrodes with one another,
- wherein the support pattern includes support holes exposing side surfaces of the bottom electrodes, the support holes including a plurality of first support holes, at least one second support hole, and at least one third support hole that are spaced apart from each other, the first to third support holes having different shapes from each other.
Dependencies are inferred from the claim text.