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US 2019/0295981 A1Published application
Silicon Carbide Devices and Methods for Manufacturing the Same
AssigneeInfineon Technologies AG
InventorsMichael Roesner, Markus Menath, Gudrun Stranzl
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Abstract
A semiconductor device includes a silicon carbide layer, a metal carbide layer arranged over the silicon carbide layer, and a solder layer arranged over and in contact with the metal carbide layer.
Claims21
A semiconductor device, comprising:
- a silicon carbide layer;
- a metal carbide layer arranged over the silicon carbide layer;
- and
- a solder layer arranged over and in contact with the metal carbide layer.
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A method, comprising:
- forming a carbon-comprising layer on a silicon carbide layer;
- forming a solder layer over the carbon-comprising layer, the solder layer comprising a carbide-forming metal;
- and
- forming a metal carbide layer between the carbon-comprising layer and the solder layer, the metal carbide layer being formed from a carbide-forming metal of the solder layer and carbon of the carbon-comprising layer.
1 more element
Dependencies are inferred from the claim text.