Nitride-based electronic device and method for manufacturing same

A method of manufacturing a nitride-based electronic device, the method comprising:

• sequentially forming a channel layer and a barrier layer on a substrate;
• and
• alternately forming protection layers and an electrode,
• wherein the protection layers include at least two protection layers formed above an upper peripheral portion of the electrode,
• patterning is performed such that an end of a lower protection layer of the two protection layers is disposed on the electrode, and
• patterning is performed such that an upper protection layer of the two protection layers covers the end of the lower protection layer to prevent the end of the lower protection layer from being exposed.