Semiconductor device including conductive structure having nucleation structure and method of forming the same

A method of forming a semiconductor device, the method comprising:

• forming a barrier material layer;
• forming a nucleation material layer on the barrier material layer, wherein the nucleation material layer is formed by performing a first deposition process using a first reducing material, a second reducing material and a source material;
• and
• forming a conductive material layer on the nucleation material layer,
• wherein the forming the nucleation material layer comprises an initial unit process of forming a first nucleation material that is amorphous and that contacts the barrier material layer, and a final unit process of forming a second nucleation material that is crystalline and that contacts the conductive material layer,
• the initial unit process comprises supplying the first reducing material and the source material to a process chamber sequentially, and
• the final unit process comprises supplying the second reducing material and the source material to the process chamber sequentially.

A method of forming a semiconductor device, the method comprising:

• forming a first insulating structure having a first opening, the first insulating structure on a substrate;
• and
• forming a first conductive structure in the first opening,
• wherein the forming the first conductive structure comprises:
• forming a barrier layer;
• forming a first nucleation layer on the barrier layer;
• forming a second nucleation layer on the first nucleation layer;
• and
• forming a conductive pattern on the second nucleation layer,
• wherein the first nucleation layer contacts the barrier layer,
• wherein the second nucleation layer is spaced apart from the barrier layer and contacts lateral and bottom surfaces of the conductive pattern, and
• wherein a first top end portion of the second nucleation layer is above a first top end portion of the first nucleation layer.