Semiconductor device

Abstract

A semiconductor device according to an embodiment includes a first substrate including a first insulating layer, a first conductive layer provided in the first insulating layer, a first metal layer provided in the first insulating layer, and a second metal layer provided between the first metal layer and the first conductive layer, a linear expansion coefficient of the second metal layer being higher than that of the first metal layer; and a second substrate including a second insulating layer, and a third metal layer provided in the second insulating layer, in contact with the first metal layer. The second substrate contacts with the first substrate.

Dependencies are inferred from the claim text.