Plasma processing apparatus

A plasma processing apparatus comprising:

• a processing chamber which is disposed in a vacuum vessel and in which plasma is formed inside the vacuum vessel;
• a sample stage which is disposed below an inside of the processing chamber and on which a sample to be processed using the plasma is placed;
• a dielectric member forming an upper surface portion of the sample stage including a placement surface on which the sample is placed;
• a plurality of film-shaped electrodes which is disposed in the dielectric member, to which a DC power from a DC power supply is supplied, to which a predetermined polarity is imparted, and in which an electrostatic force for attracting the sample is formed;
• and
• a bias electrode made of a conductor, the bias electrode being disposed below the dielectric member in the sample stage and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample,
• wherein the plurality of electrodes includes a first electrode to which a positive polarity is imparted and a second electrode to which a negative polarity is imparted based on the DC power,
• wherein the first electrode is electrically connected to a positive electrode terminal of the DC power supply via a low pass filter circuit, and
• wherein the second electrode is electrically connected to a negative electrode terminal of the DC power supply through the low pass filter circuit.