Semiconductor memory device
AssigneeToshiba Memory Corporation
InventorsShingo NAKAZAWA, Takayuki MIYAZAKI
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Abstract
According to one embodiment, a semiconductor memory device includes a memory cell having a variable resistance unit, a first selector, and a second selector. The first and second selectors are connected in series with the variable resistance unit and have different switching characteristics from one another. A control unit is provided to write data to the memory cell by setting a resistance state of the variable resistance unit and to read data from the memory cell according to the resistance state of the variable resistance unit.
Claims20
A semiconductor memory device, comprising:
- a memory cell having a variable resistance unit, a first selector, and a second selector, the first and second selectors being connected in series with the variable resistance unit and having different switch characteristics from one another;
- and
- a control unit that writes data to the memory cell by setting a resistance state of the variable resistance unit and reads data from the memory cell according to the resistance state of the variable resistance unit.
A semiconductor memory device, comprising:
- a plurality of memory cells in rows and columns, each memory cell comprising a first selector layer, a second selector layer, and a phase change material in a layer stack, the first and second selectors having different switch characteristics from each other;
- a plurality of word lines each respectively connected to a row of memory cells in the plurality of memory cells;
- and
- a plurality of bit lines each respectively connected to a column of memory cells in the plurality of memory cells, wherein
- each memory cell is connected between one word line in the plurality of word lines and one bit line in the plurality of bit lines.
A semiconductor memory device, comprising:
- a memory cell including a first electrode layer, a first selector layer on the first electrode layer, a phase change material on the first selector layer, a second selector layer on the phase change material, and a second electrode layer on the second selector layer, wherein
- the first selector layer and the second selector layer have at least one of different layer thicknesses, different material compositions, and different planar areas with respect to a planar area the phase change material.
Dependencies are inferred from the claim text.