Compositions and methods using same for deposition of silicon-containing film

A method for depositing a film selected from a silicon oxide and a carbon doped silicon oxide film using flowable chemical vapor deposition, the method comprising:

• placing a substrate comprising a surface feature into a reactor wherein the substrate is maintained at one or more temperatures ranging from about −20° C. to about 400° C. and a pressure of the reactor is maintained at 100 torr or less;
• introducing at least one compound selected from the group consisting of Formulae I or II below:
• wherein R is selected from a branched C4 to C10 alkyl group and R1, R2, R3, R4 are each independently selected from a hydrogen atom, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, an electron withdrawing group, a C3 to C10 cyclic alkyl group, and a halide atom and wherein the at least one compound forms a species that covers at least a portion of the surface feature;
• and
• treating the species with an oxygen source at one or more temperatures ranging from about 500° C. to about 1000° C. to form the film on at least a portion of the surface feature.

A method for depositing a film selected from a silicon oxide and a carbon doped silicon oxide film in a deposition process, the method comprising:

• placing a substrate having a surface feature into a reactor which are maintained at one or more temperatures ranging from about −20° C. to about 400° C.;
• introducing into the reactor at least one compound selected from the group consisting of Formulae I or II below:
• wherein R is selected from a branched C4 to C10 alkyl group and R1, R2, R3, R4 are each independently selected from a hydrogen atom, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, an electron withdrawing group, a C4 to C10 aryl group, and a halide atom and a nitrogen source wherein the at least one compound reacts with the nitrogen source to form a nitride containing film on at least a portion of the surface feature;
• and
• treating the substrate with an oxygen source at one or more temperatures ranging from about 100° C. to about 1000° C. to form the silicon oxide film on at least a portion of the surface feature to provide the film.

A method for depositing a silicon-containing film using flowable chemical vapor deposition, the method comprising:

• placing a substrate comprising a surface feature into a reactor wherein the substrate is maintained at one or more temperatures ranging from about −20° C. to about 400° C. and a pressure of the reactor is maintained at 100 torr or less;
• introducing at least one compound selected from the group consisting of Formulae I or II below:
• wherein R is selected from a branched C4 to C10 alkyl group and R1, R2, R3, R4 are each independently selected from a hydrogen atom, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, an electron withdrawing group, a C3 to C10 cyclic alkyl group, and a halide atom and wherein the at least one compound forms a species that covers at least a portion of the surface feature;
• and
• treating the species with a plasma source at one or more temperatures ranging from about 100° C. to about 1000° C. to form the film on at least a portion of the surface feature.