Plasma processing apparatus and method for controlling plasma processing apparatus

A method for controlling a plasma processing apparatus including a grounded processing container, a mounting table configured to support a workpiece inside the processing container, a plurality of electrodes arranged to face the mounting table and insulated from one another, a high frequency power supply configured to supply a high frequency power for generating plasma and electrically connected between two different electrodes out of the plurality of electrodes or between one of the plurality of electrodes and the processing container, an impedance variable circuit configured to control an impedance and electrically connected between two different electrodes out of the plurality of electrodes or between one of the plurality of electrodes and the processing container, and a monitor configured to measure a high frequency amplitude or a direct current potential on a surface of one electrode among the plurality of electrodes, the one electrode being connected to the impedance variable circuit, and the surface facing the mounting table, the method comprising:

• acquiring the high frequency amplitude or the direct current potential measured by the monitor;
• and
• controlling the impedance of the impedance variable circuit so that the high frequency amplitude or the direct current potential is set to a target value.