Nitride semiconductor laser and nitride semiconductor laser device

A nitride semiconductor laser, comprising:

• a first nitride semiconductor layer;
• a light-emitting layer on the first nitride semiconductor layer, the light-emitting layer including a nitride semiconductor;
• a second nitride semiconductor layer on the light-emitting layer, the second nitride semiconductor layer having a ridge portion;
• an electrode component on the second nitride semiconductor layer;
• a dielectric layer on side surfaces of the ridge portion, the dielectric layer including SiO2;
• and
• pad components on the second nitride semiconductor layer, the pad components including a same material as a material of the electrode component, wherein
• the pad components are not in contact with the dielectric layer, and
• the electrode component is not in contact with the dielectric layer, and is in contact with an upper surface of the ridge portion.