Magnetoresistive effect device

A magnetoresistive effect device comprising:

• an input port into which a high-frequency signal is to be input;
• an input-side signal line which is connected to the input port and through which high-frequency current corresponding to the high-frequency signal input into the input port flows;
• an N-number MR units (N is a natural number not smaller than two) each including a magnetoresistive effect element and a magnetic-field generating signal line;
• and
• an output unit including a magnetoresistive effect element, an output-side signal line, and an output port, the magnetoresistive effect device further including
• a DC application terminal so as to be capable of applying DC current or DC voltage to the magnetoresistive effect elements in the N-number MR units and the magnetoresistive effect element in the output unit,
• wherein the magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer arranged between the first ferromagnetic layer and the second ferromagnetic layer,
• wherein the magnetoresistive effect element in the output unit is connected to the output port via the output-side signal line,
• wherein the input-side signal line is arranged so that a high-frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in a first MR unit in the MR units,
• wherein, in each of the MR units, the magnetoresistive effect element is connected to the magnetic-field generating signal line so that high-frequency current output from the magnetoresistive effect element flows through the magnetic-field generating signal line,
• wherein the magnetic-field generating signal line in an M-th MR unit (M is a natural number that meets 1≤M≤N−1) in the MR units is arranged so that a high-frequency magnetic field generated from the magnetic-field generating signal line in the M-th MR unit is applied to the magnetoresistive effect element in an M+1-th MR unit in the MR units, and
• wherein the magnetic-field generating signal line in an N-th MR unit in the MR units is arranged so that a high-frequency magnetic field generated from the magnetic-field generating signal line in the N-th MR unit is applied to the magnetoresistive effect element in the output unit.