CMP Stop Layer and Sacrifice Layer for High Yield Small Size MRAM Devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi Yang, Zhongjian Teng, Yu-Jen Wang
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Abstract
An array, such as an MRAM (Magnetic Random Access Memory) array formed of a multiplicity of layered thin film devices, such as MTJ (Magnetic Tunnel Junction) devices, can be simultaneously formed in a multiplicity of horizontal widths in the 60 nm range while all having top electrodes with substantially equal thicknesses and coplanar upper surfaces. This allows such a multiplicity of devices to be electrically connected by a common conductor without the possibility of electrical opens and with a resulting high yield.
Claims21
An array of devices, the array comprising:
- a common substrate;
- a multiplicity of N spatially separated multilayered devices having coplanar upper surfaces, the N multilayered devices being formed on the common substrate, wherein
- each of the N multilayered devices has a respective width dn, where n runs from 1 to N, and wherein the respective widths dn are generally different;
- wherein the N multilayered devices have a common height h, and wherein
- each of the N multilayered devices comprises:
- a lower electrode;
- an active device element formed on the lower electrode;
- and
- an upper electrode formed on the active device element, wherein
- the upper electrodes of the N multilayered devices have identical thicknesses and wherein upper surfaces of the upper electrodes of the N multilayered devices are coplanar;
- a single top metal contact formed over the upper electrodes of the N multilayered devices, the single top metal contact being common to the N multilayered devices, the single top metal contact making open-free electrical contact with the upper electrodes of the N multilayered devices;
- and
- a space-filling insulating layer disposed between the N multilayered devices, wherein a space defined by the common substrate, adjacent devices of the N multilayered devices, and the single top metal contact is entirely filled by the space-filling insulating layer.
6-14. (canceled)
An array of devices, the array comprising:
- a substrate layer;
- a first multilayer device disposed on the substrate layer;
- a second multilayer device disposed on the substrate layer, the second multilayer device being laterally adjacent to the first multilayer device, a width of the first multilayer device being different from a width of the second multilayer device, a height of the first multilayer device being equal to a height of the second multilayer device;
- a dielectric material filling an entirety of a space between the first multilayer device and the second multilayer device, the dielectric material having an uppermost surface that extends continuously from an uppermost surface of the first multilayer device to an uppermost surface of the second multilayer device, wherein the uppermost surfaces of the first multilayer device, the second multilayer device, and the dielectric material are coplanar;
- and
- a metal contact disposed on the first multilayer device, the second multilayer device, and the dielectric material, the metal contact being a common contact for the first multilayer device and the second multilayer device.
An array of devices, the array comprising:
- a substrate;
- a plurality of multilayered devices disposed on the substrate and laterally separated from one another, the plurality of multilayered devices having a common height and different widths, each of the plurality of multilayered devices comprising:
- a bottom electrode disposed on the substrate;
- an active device disposed on the bottom electrode;
- and
- a top electrode disposed on the active device;
- a top metal contact disposed on the top electrodes of the plurality of multilayered devices, the top metal contact being a common contact for the plurality of multilayered devices;
- and
- a dielectric encapsulant disposed between adjacent devices of the plurality of multilayered devices, the dielectric encapsulant filling an entirety of a space defined by the substrate, the adjacent devices, and the top metal contact, wherein a bottommost surface of the top metal contact, topmost surfaces of the top electrodes of adjacent devices, and a topmost surface of the dielectric encapsulant are coplanar.
Dependencies are inferred from the claim text.