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US 2019/0245140 A1Published application
Semiconductor structure and associated operating and fabricating method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHWEN YU, SHY-JAY LIN
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Abstract
A semiconductor structure is provided. The semiconductor structure includes: a substrate; a magnetic layer over the substrate; a magnetic tunnel junction (MTJ) cell over the magnetic layer; and a non-magnetic conductive layer between the magnetic layer and the MTJ cell. An associated method for fabricating the semiconductor structure is also disclosed.
Claims20
A semiconductor structure for storing a data, the semiconductor structure comprising:
- a first terminal, a second terminal and a third terminal, wherein the data is written into the semiconductor structure through the first terminal and the second terminal, and the data is read out from the semiconductor structure through the second terminal and the third terminal;
- a substrate;
- a magnetic layer over the substrate, a first end of the magnetic layer being coupled to the first terminal, and a second end opposite to the first end of the magnetic layer being coupled to the second terminal;
- a magnetic tunnel junction (MTJ) cell over the magnetic layer, wherein the first end and the second end of the magnetic layer laterally protrude from sidewalls of the MTJ cell, and the MTJ cell is between the first end and the second end of the magnetic layer, and the MTJ cell includes:
- a free layer;
- a barrier layer over the free layer;
- and
- a reference layer over the barrier layer;
- and
- a top electrode over the MTJ cell, the top electrode being in direct contact with the third terminal.
7 more elements
A method of writing a magnetic tunnel junction (MTJ) cell, the method comprising:
- providing a magnetic layer neighboring to the MTJ cell, the magnetic layer having a first direction of magnetization;
- and
- flipping a direction of magnetization of the magnetic layer from the first direction to a second direction opposite to the first direction.
A method of fabricating a semiconductor structure, comprising:
- providing a semiconductor substrate;
- depositing a magnetic layer over the semiconductor substrate;
- depositing a free layer over the magnetic layer;
- depositing a barrier layer over the free layer;
- depositing a reference layer over the barrier layer;
- depositing a top electrode over the free layer;
- patterning the free layer, the reference layer and the top electrode;
- and
- removing a portion of the magnetic layer.
6 more elements
Dependencies are inferred from the claim text.