Shadow mask sidewall tunnel junction for quantum computing
AssigneeInternational Business Machines Corporation
InventorsMarkus Brink, Sami Rosenblatt
Life of this patent
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Abstract
A technique relates to forming a sidewall tunnel junction. A first conducting layer is formed using a first shadow mask evaporation. A second conducting layer is formed on a portion of the first conducting layer, where the second conducting layer is formed using a second shadow mask evaporation. An oxide layer is formed on the first conducting layer and the second conducting layer. A third conducting layer is formed on part of the oxide layer, such that the sidewall tunnel junction is positioned between the first conducting layer and the third conducting layer.
Claims20
A method of forming a sidewall tunnel junction comprising:
- forming a non-metal layer having a height dimension greater than a width dimension;
- forming a first conducting layer on a portion of the non-metal layer, the first conducting layer being formed using a first shadow mask evaporation;
- forming an oxide layer on the first conducting layer;
- and
- forming a second conducting layer on part of the oxide layer, such that the sidewall tunnel junction is positioned between the first conducting layer and the second conducting layer.
A method of forming a sidewall tunnel junction comprising:
- forming a first conducting layer using a first shadow mask evaporation, the first conducting layer having a width dimension greater than a height dimension;
- forming a second conducting layer on top of a portion of the first conducting layer, the second conducting layer being formed using a second shadow mask evaporation;
- forming an oxide layer on the first conducting layer and the second conducting layer, a part of the first conducting layer being underneath the second conducting layer;
- and
- forming a third conducting layer on a region of the oxide layer, such that the sidewall tunnel junction is positioned between the second conducting layer and the third conducting layer, wherein the sidewall tunnel junction is also positioned between the part of the first conducting layer and the third conducting layer.
A method of forming a sidewall tunnel junction comprising:
- forming a first conducting layer using a first shadow mask evaporation, the first conducting layer having a height dimension greater than a width dimension;
- forming an oxide layer on the first conducting layer;
- and
- forming a second conducting layer on the oxide layer covering a top portion and a side portion of the first conducting layer, such that the sidewall tunnel junction is positioned between the second conducting layer and the top and side portions of the first conducting layer, wherein the second conducting layer is formed using a second shadow mask evaporation.
Dependencies are inferred from the claim text.